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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6411-B Issued Date : 199.03.06 Revised Date : 2000.09.01 Page No. : 1/3 HAD826 NPN EPITAXIAL PLANAR TRANSISTOR Description The HAD826 is designed for general purpose amplifier and high speed, medium-power switching applications. Features * Low Collector Saturation Voltage * High Speed Switching Absolute Maximum Ratings * Maximum Temperatures Storage Temperature .......................................................................................... -55 ~ +150 C Junction Temperature..................................................................................... 150 C Maximum * Maximum Power Dissipations Total Power Dissipation (Ta=25C) .............................................................................. 625 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ........................................................................................ 75 V VCEO Collector to Emitter Voltage..................................................................................... 60 V VEBO Emitter to Base Voltage ............................................................................................. 6 V IC Collector Current ....................................................................................................... 600mA Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 *hFE6 fT Cob Min. 75 60 6 35 50 75 100 40 50 300 Typ. Max. 10 10 50 300 1 1.2 2 300 8 Unit V V V nA nA nA mV V V V Test Conditions IC=10uA, IE=0 IC=10mA, IB=0 IE=10uA, IC=0 VCB=60V, IE=0 VCB=60V, VEB(OFF)=3V VEB=3V, IC=0 IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=100uA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=1V, IC=150mA IC=20mA, VCE=20V, f=100MHz VCB=10V, F=1MHz MHz pF HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Colletor Current 1000 10000 Spec. No. : HE6411-B Issued Date : 199.03.06 Revised Date : 2000.09.01 Page No. : 2/3 Saturation Voltage & Collector Current VCE=10V Current Gain-hFE 100 Saturation Voltage (mV) 1000 VBE(sat)@IC=10IB 100 VCE=1V 10 10 VCE(sat)@IC=10IB 1 1 10 100 1000 1 0.1 1 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) Cutoff Frequency & Collector Current 1000 10 Capacitance & Reverse-Biased Voltage Cutoff Frequency (MHz) VCE=20V Capacitance-(Pf) 100 Cob 10 1 1 10 100 1 0.1 Collector Current-IC (mA) 1 10 Reverse Biased Voltage (V) 100 Safe Operating Area 10000 700 600 PD-Ta Collector Current-IC (mA) 1000 PT=1s 100 PT=1ms Power Dissipation-PD(mW) PT=100ms 500 400 300 200 100 0 10 1 1 10 100 0 20 40 60 80 100 o 120 140 160 Forward Voltage-VCE (V) Ambient Temperature-Ta( C) HSMC Product Specification |
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